Modified source/drain re-oxidation method and system

Details Modified source/drain re-oxidation method and system Modified source/drain re-oxidation method and system

2006-05-02

2006-05-02

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S303000, C438S595000, C438S264000

Reexamination Certificate

active

07037860

ABSTRACT:
Methods and devices are disclosed utilizing a phosphorous-doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation process and greater control of the performance characteristics of semiconductor devices such as flash memory. For flash memory, greater control is gained over programming rates, erase rates, data retention and self align source resistance.

REFERENCES:
patent: 5278087 (1994-01-01), Jenq
patent: 5298447 (1994-03-01), Hong
patent: 5397724 (1995-03-01), Nakajima et al.
patent: 5464782 (1995-11-01), Koh
patent: 5596213 (1997-01-01), Lee
patent: 5652152 (1997-07-01), Pan et al.
patent: 5726470 (1998-03-01), Sato
patent: 5763309 (1998-06-01), Chang
patent: 5851881 (1998-12-01), Lin et al.
patent: 5874759 (1999-02-01), Park
patent: 5885877 (1999-03-01), Gardner et al.
patent: 6033954 (2000-03-01), Park
patent: 6235581 (2001-05-01), Chen
patent: 6303959 (2001-10-01), Ratnam
patent: 6437444 (2002-08-01), Andideh
patent: 6661057 (2003-12-01), Dawson et al.

Affiliated with

Also associated with

Rating

Modified source/drain re-oxidation method and system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Modified source/drain re-oxidation method and system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Modified source/drain re-oxidation method and system will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3634379