Modified facet etch to prevent blown gate oxide and increase...

Details Modified facet etch to prevent blown gate oxide and increase... Modified facet etch to prevent blown gate oxide and increase...

2007-08-28

2007-08-28

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C706S032000, C706S032000, C706S032000, C216S067000

Reexamination Certificate

active

10887049

ABSTRACT:
A modified facet etch is disclosed to prevent blown gate oxide and increase etch chamber life. The modified facet etch is a two-stage process. The first stage is a plasma sputter etch to form a facet profile. The first stage etch is terminated prior to reaching the target depth for the etching process. The second stage etch is a reactive ion etch which directionally follows the facet profile to reach the target depth.

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