Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Reexamination Certificate
2007-04-17
2007-04-17
Malsawma, Lex H. (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
C438S777000
Reexamination Certificate
active
10710700
ABSTRACT:
A method and structure for fabricating semiconductor wafers. The method comprises providing a plurality of semiconductor wafers. The plurality of semiconductor wafers comprises a first semiconductor wafer and a second semiconductor wafer. The first semiconductor wafer is located adjacent to the second semiconductor wafer. A relationship is provided between a plurality of values for an electrical characteristic and a plurality of materials. A material is chosen from the plurality of materials existing in the relationship. A substructure is formed comprising the material sandwiched between a topside of the first semiconductor wafer and a backside of a portion of the of the second semiconductor wafer. The plurality of semiconductor wafers are placed into a furnace comprising an elevated temperature for processing resulting in a value for the first semiconductor wafer of the electrical characteristic that corresponds to said material in said relationship.
REFERENCES:
patent: 3769104 (1973-10-01), Ono et al.
patent: 4603059 (1986-07-01), Kiyosumi et al.
patent: 4687682 (1987-08-01), Koze
patent: 4925809 (1990-05-01), Yoshiharu et al.
patent: 5121705 (1992-06-01), Sugino
patent: 5296385 (1994-03-01), Moslehi et al.
patent: 5571333 (1996-11-01), Kanaya
patent: 6448180 (2002-09-01), Mani et al.
patent: 6454854 (2002-09-01), Ose
patent: 6670283 (2003-12-01), Baker et al.
patent: 2003/0096507 (2003-05-01), Baker et al.
patent: 2003/0119288 (2003-06-01), Yamazaki et al.
Grant Casey J.
Greer Heidi L.
Shank Steven M.
Triplett Michael C.
International Business Machines - Corporation
Malsawma Lex H.
Sabo William D.
Schmeiser Olsen & Watts
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