Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2005-03-22
2005-03-22
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S189070, C365S189090
Reexamination Certificate
active
06870783
ABSTRACT:
In a mode entrance control circuit and a mode entering method to stably enter a semiconductor memory device into a predetermined operating mode only when insensitive to a change of a process, temperature, or voltage, etc., and simultaneously satisfying a constant entrance condition, the mode entrance control circuit includes an operation control part for generating an operation enable signal when a first voltage applied through a first pad is over a first determination voltage, a voltage division part for dividing a second voltage applied through a second pad to generate a trimming reference voltage, and a mode entrance signal generating part operated in response to the operation enable signal, for comparing a level of an applied fixed reference voltage with a level of the trimming reference voltage, and for generating a mode entrance enable signal to allow the semiconductor memory device to enter into a predetermined mode.
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Kwak Choong-Keun
Lim Bo-Tak
Hur J. H.
Lee, Sterba & Morse P.C.
Phung Anh
Samsung Electronics Co,. Ltd.
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