MOCVD reactor system for indium antimonide epitaxial material

Details MOCVD reactor system for indium antimonide epitaxial material MOCVD reactor system for indium antimonide epitaxial material

1996-02-26

1997-12-30

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Work support

118715, 118726, C23C 1600

Patent

active

057025320

ABSTRACT:
Multiple solid precursor bubblers are used to alleviate channeling effects caused by high carrying gas flow rates to provide for deposition of indium-based epitaxial materials in high-capacity MOCVD reactor systems. Precracking of precursor materials that exhibit higher dissociation temperatures using heated manifolds or heated susceptor, and rotation of individual wafers in a multi-wafer reactor chamber enhance thickness uniformity, surface morphology and electronic properties of deposited epitaxial layers.

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Powell, Carroll; Oxley, Joseph; Blocher, John; Vapor Deposition, 1966 pp. 269-276.

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