MOCVD process using ozone as a reactant to deposit a metal...

Details MOCVD process using ozone as a reactant to deposit a metal... MOCVD process using ozone as a reactant to deposit a metal...

2005-01-25

2005-01-25

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S643000, C438S648000, C438S650000, C438S653000, C438S656000, C438S681000

Reexamination Certificate

active

06846739

ABSTRACT:
An inventive process is disclosed for creating a barrier layer on a silicon substrate of an in-process integrated circuit. The process uses MOCVD to form a metal oxide film. The source gas is preferably an organometallic compound. Ozone is used as an oxidizing agent in order to react with the source gas at a low temperature and fully volatilize carbon from the source gas. The high reactivity of ozone at a low temperature provides a more uniform step coverage on contact openings. The process is used to create etch stop layers and diffusion barriers.

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