Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-08-04
2010-06-22
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S275000, C257SE21632
Reexamination Certificate
active
07741169
ABSTRACT:
The present invention provides a complementary metal-oxide-semiconductor (CMOS) device and a fabrication method thereof. The CMOSFET device includes a compressively strained SiGe channel for a PMOSFET, as well as a tensile strained Si channel for an NMOSFET, thereby enhancing hole and electron mobility for the PMOSFET and the NMOSFET, respectively. As such, the threshold voltages of the two types of transistors can be obtained in oppositely symmetric by single metal gate.
REFERENCES:
patent: 6784507 (2004-08-01), Wallace et al.
patent: 6927414 (2005-08-01), Ouyang et al.
patent: 2003/0062586 (2003-04-01), Wallace et al.
patent: 2006/0160290 (2006-07-01), Chong et al.
patent: 2003-086708 (2003-03-01), None
patent: 2003-332462 (2003-11-01), None
patent: 2004-221114 (2004-08-01), None
patent: 2004-235345 (2004-08-01), None
Hsieh Wen Yi
Lee Min-Hung
Lin Yu-Ming
Lu Shin-Chii
Pei Zing-Way
Industrial Technology Research Institute
Quintero Law Office
Thai Luan C
LandOfFree
Mobility enhancement by strained channel CMOSFET with single... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Mobility enhancement by strained channel CMOSFET with single..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mobility enhancement by strained channel CMOSFET with single... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4250392