Mixed-mode process

Details Mixed-mode process Mixed-mode process

2005-07-12

2005-07-12

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S680000

Reexamination Certificate

active

06916700

ABSTRACT:
A mixed-mode process introduces a hard mask layer. Due to the introduced hard mask layer made of non-resist material formed over devices, performance of a formed capacitor is protected from effects of an implantation process such as source/drain implantation. A self-aligned silicide (salicide) process for a MOSFET transistor can also be performed. Thus, production efficiency and performance of an IC product formed by the mixed-mode process can be improved. Moreover, the number of required fabrication steps is reduced and cost savings can be realized.

REFERENCES:
patent: 5618749 (1997-04-01), Takahashi et al.
patent: 5792681 (1998-08-01), Chang et al.
patent: 5918119 (1999-06-01), Huang
patent: 6323079 (2001-11-01), Takeshita
patent: 6586299 (2003-07-01), Tsai

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