Mist type dynamic random access memory cell and formation proces

Details Mist type dynamic random access memory cell and formation proces Mist type dynamic random access memory cell and formation proces

1991-06-25

1992-09-08

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Capacitors

365150, G11C 1124

Patent

active

051464250

ABSTRACT:
A dynamic random access memory cell having a mixed trenched stacked capacitor, and a formation process therefor are disclosed. The punch-through phenomenon is prevented by providing a difference between the trench depths of the trenched capacitors. The insufficient capacitance of the capacitor having a shallower trench is compensated by making the area of the electrode of the stacked capacitor larger than the area of the electrode of the stacked capacitor of the memory cell having a deeper trenched capacitor. Thus, the coupling phenomenon liable to occur between the stacked capacitors can be prevented, thereby providing a DRAM cell applicable to a ultra large scale integrated circuit.

REFERENCES:
patent: Re33261 (1990-07-01), Baglee et al.

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