MIS type semiconductor device and method for manufacturing same

Details MIS type semiconductor device and method for manufacturing same MIS type semiconductor device and method for manufacturing same

1997-10-30

1998-11-10

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438302, 438306, 438919, H01L 218238

Patent

active

058343474

ABSTRACT:
A P-type impurity is doped by oblique ion implantation into N-type impurity diffusion layers formed respectively on both sides of a gate electrode of a Pch MOS transistor, thereby canceling the impurity of at least a portion of an N-type region overlapped by the gate electrode, to thereby suppress a rise in the threshold voltage of the P-channel type MIS transistor due to the N-type impurity diffusion layer and suppress fluctuations in the amount of current that can be made to flow and the current-driving capacity.

REFERENCES:
patent: 4908327 (1990-03-01), Chapman
patent: 4924277 (1990-05-01), Yamane et al.
patent: 4956311 (1990-09-01), Liou et al.
patent: 5036019 (1991-07-01), Yamane et al.
patent: 5216272 (1993-06-01), Kubokoya et al.
patent: 5334870 (1994-08-01), Katada et al.
patent: 5413945 (1995-05-01), Chien et al.
patent: 5492847 (1996-02-01), Kao et al.
Wolf et al., "Silicon Processing for the VLSI Era vol. 1: Process Technology", Latice Press, pp. 292-293, 1986.

Affiliated with

Also associated with

Rating

MIS type semiconductor device and method for manufacturing same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MIS type semiconductor device and method for manufacturing same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MIS type semiconductor device and method for manufacturing same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1516183