Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2006-06-20
2011-11-08
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S414000, C257S416000, C257S417000, C257SE29324
Reexamination Certificate
active
08053850
ABSTRACT:
A micromachine is generally formed using a semiconductor substrate such as a silicon wafer. One of the objects of the present invention is to realize further reduction in cost by integrating a minute structure and a semiconductor element controlling the minute structure over one insulating surface in one step. A minute structure has a structure in which a first layer formed into a frame-shape are provided over an insulating surface, a space is formed inside the frame, and a second layer is formed to cross over the first layer. Such a minute structure and a thin film transistor can be integrated over one insulating surface in one step.
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Office Action (Chinese Patent Application No. 200610099772.0) mailed Aug. 28 2009 w/translation.
Izumi Konami
Yamaguchi Mayumi
Diaz José R
Fish & Richardson P.C.
Parker Kenneth
Semiconductor Energy Laboratory Co,. Ltd.
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