Minimum size integrated circuit static memory cell

Details Minimum size integrated circuit static memory cell Minimum size integrated circuit static memory cell

1997-09-10

1998-11-17

Brown, Peter Toby

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438241, 438155, H01L 218244

Patent

active

058375732

ABSTRACT:
A semiconductor static memory cell with two cross-coupled inverters and two transmission gates for coupling two bit lines uses all minimum size (gate length and gate width) MOSFETs to achieve minimum area. This minimum dimension is rendered possible by using a higher threshold voltage for the transmission gate MOSFET than the threshold voltage of pull-down MOSFET of the inverter. Different threshold voltages are obtained with selective ion implantation, different gate oxide thicknesses and/or different gate doping.

REFERENCES:
patent: 5703392 (1997-12-01), Guo

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