Minimizing transistor size in integrated circuits

Details Minimizing transistor size in integrated circuits Minimizing transistor size in integrated circuits

2006-04-11

2006-04-11

Nguyen, Thanh T. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S383000, C257S387000, C257S751000, C257S763000, C257S774000

Reexamination Certificate

active

07026691

ABSTRACT:
A method for fabricating a field effect transistor (FET) in and on a semiconductor substrate with local interconnects to permit the formation of minimal space between gate and the local interconnects by fabricating the source and drain of the FET and the local interconnects prior to forming the gate of the FET.

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