Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-11
2006-04-11
Nguyen, Thanh T. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S383000, C257S387000, C257S751000, C257S763000, C257S774000
Reexamination Certificate
active
07026691
ABSTRACT:
A method for fabricating a field effect transistor (FET) in and on a semiconductor substrate with local interconnects to permit the formation of minimal space between gate and the local interconnects by fabricating the source and drain of the FET and the local interconnects prior to forming the gate of the FET.
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Holst John C.
Horne Stephen C.
Kepler Nicholas J.
Klein Rich K.
Lee Raymond T.
Advanced Micro Devices , Inc.
Foley & Lardner LLP
Nguyen Thanh T.
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