Minimizing coating defects in low dielectric constant films

Details Minimizing coating defects in low dielectric constant films Minimizing coating defects in low dielectric constant films

2002-03-20

2003-12-23

Pert, Evan (Department: 2829)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S778000, C438S780000, C438S781000, C438S782000, C438S784000

Reexamination Certificate

active

06667249

ABSTRACT:

BACKGROUND OF THE INVENTION
(1) Field of the Invention
The invention relates to a method of forming a low dielectric constant material film in the fabrication of integrated circuits, and more particularly, to a method of minimizing coating defects in forming a low dielectric constant material film in the manufacture of integrated circuits.
(2) Description of the Prior Art
Low dielectric constant (k) materials have been used increasingly in the art in order to minimize RC delay in circuits. Low-k materials are often used especially in damascene processes. Defects in the coating of the low-k materials on a wafer may occur because of particles, roughness, or surface defects. These defects may cause problems such as peeling after chemical mechanical polishing (CMP) and copper plating defects.
U.S. Pat. No. 5,066,616 to Gordon discloses a method of coating a solvent and thereafter coating a photoresist material layer. U.S. Pat. No. 5,246,782 to Kennedy et al teaches forming a polymer laminate where the surface may be prepared using an undisclosed solvent treatment. U.S. Pat. No. 6,146,729 to Hopper et al and U.S. Pat. No. 5,656,555 to Cho show low-k material processes.
SUMMARY OF THE INVENTION
A principal object of the present invention is to provide an effective and very manufacturable method of coating a low dielectric constant material layer in the fabrication of integrated circuit devices.
Another object of the invention is to provide a method of coating a low dielectric constant material in the fabrication of integrated circuit devices wherein coating defects are eliminated.
Yet another object of the invention is to provide a method of coating a low dielectric constant material layer wherein the wafer surface is pre-wetted to prevent coating defects.
A further object is to provide a method of coating a low dielectric constant material layer wherein the wafer surface is pre-wetted using a solvent to prevent or reduce coating defects.
In accordance with the objects of this invention a method of coating a low dielectric constant material layer wherein the wafer surface is pre-wetted using a solvent to prevent or reduce coating defects is achieved. A semiconductor substrate is provided wherein a top surface of the semiconductor substrate may have surface defects. A solvent is coated overlying the top surface of the semiconductor substrate. A low dielectric constant material layer is coated overlying the solvent wherein the solvent covers the surface defects thereby preventing defects in the low dielectric constant material layer.


REFERENCES:
patent: 4267212 (1981-05-01), Sakawaki
patent: 5066616 (1991-11-01), Gordon
patent: 5246782 (1993-09-01), Kennedy et al.
patent: 5656555 (1997-08-01), Cho
patent: 5962621 (1999-10-01), Beckerdite et al.
patent: 5998103 (1999-12-01), Zhang
patent: 6066574 (2000-05-01), You et al.
patent: 6136729 (2000-10-01), Hopper et al.
patent: 6303524 (2001-10-01), Sharangpani et al.
patent: 6436851 (2002-08-01), Young et al.
patent: 411219948 (1999-08-01), None
patent: 2001300408 (2001-10-01), None
Nalwa “Handbook of low and high dielectric constant materials and their applications”, vol. 1, 1999, p. 66.

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