MIM device and electronic apparatus

Details MIM device and electronic apparatus MIM device and electronic apparatus

2007-11-26

2009-11-03

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000, C257S312000, C257S516000, C257S532000, C438S210000, C438S239000, C438S250000, C438S253000, C438S397000

Reexamination Certificate

active

07612400

ABSTRACT:
An MIM device includes a lower electrode of a metal nitride film, a hysteresis film of an oxide film containing Nb formed on the lower electrode, and an upper electrode of a metal nitride film formed on the hysteresis film.

REFERENCES:
patent: 2002/0014644 (2002-02-01), Van Buskirk et al.
patent: 2002/0022334 (2002-02-01), Yang et al.
patent: 2005/0145916 (2005-07-01), Park et al.
patent: 2006/0002174 (2006-01-01), Hosoi et al.
patent: 2006/0017115 (2006-01-01), Tu et al.
patent: 2006/0273367 (2006-12-01), Wang
patent: 2008/0137261 (2008-06-01), Naito et al.
patent: 2003-218211 (2003-07-01), None
patent: 10-2005-0059540 (2005-06-01), None
patent: 10-2006-0120246 (2006-11-01), None
Yuichi Matsui et al; “A 500° C fabrication process for MIM capacitors-based on a Ta2O5/Nb2O5 bilayer with high permittivity-for DRAM and SoC applications,” SSDM 2004; pp. 760-761.
Hyunjun Sim et al; “Excellent Resistance Switching Characteristics of Pt/SrTiO3 Schottky Junction for Multi-bit Nonvolatile Memory Application,” IEEE Electron Device Lett. 26; 2005; pp. 292.
Official Action mailed by the Korean Patent Office on Jul. 7, 2009, in connection with corresponding KR patent application serial No. 10-2007-0121853.

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