MIM capacitor with diffusion barrier

Details MIM capacitor with diffusion barrier MIM capacitor with diffusion barrier

2005-03-08

2005-03-08

Elms, Richard (Department: 2824)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S396000

Reexamination Certificate

active

06864137

ABSTRACT:
A process of manufacturing a semiconductor device. The initial process steps are forming a first insulating film above a semiconductor substrate and removing a selected portion of the first insulating film to form an opening. The next step is depositing a first electrode, a dielectric film and a second electrode successively on a bottom portion of the opening, The deposits being oriented such that they are in substantially parallel relationship with a surface of the semiconductor substrate. The final steps are removing selected portions of the first electrode, the dielectric film and the second electrode, forming a capacitor at a selected position in the opening, forming a second insulating film at least in the opening, and forming a third insulating film on the second insulating film.

REFERENCES:
patent: 5633781 (1997-05-01), Saenger et al.
patent: 6226171 (2001-05-01), Beilin et al.
patent: 6368953 (2002-04-01), Petrarca et al.
patent: 6451664 (2002-09-01), Barth et al.
patent: 6617666 (2003-09-01), Yoshitomi et al.
patent: 8-111377 (1996-04-01), None
patent: 10-41481 (1998-02-01), None
CRC Handbook of Chemistry and Physics, 84thedition, 2004, section 12, pp. 48, 55.

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