MIM capacitor of semiconductor device and manufacturing...

Details MIM capacitor of semiconductor device and manufacturing... MIM capacitor of semiconductor device and manufacturing...

2007-10-02

2007-10-02

Andujar, Leonardo (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S142000, C438S197000, C438S238000, C438S239000, C438S253000, C257S288000, C257S213000, C257S296000, C257S306000, C257S309000, C257SE21012

Reexamination Certificate

active

11319533

ABSTRACT:
In a capacitor of a semiconductor device, a bottom electrode is formed on a substrate and has an uneven top surface. An interlayer insulation layer is formed on the substrate and has a via hole exposing the top surface of the bottom electrode. A dielectric layer is formed unevenly on the bottom electrode. A top electrode is formed on the dielectric layer while filling the via hole.

REFERENCES:
patent: 5407534 (1995-04-01), Thakur
patent: 5696017 (1997-12-01), Ueno
patent: 6251726 (2001-06-01), Huang

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