Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-21
2009-02-10
Pizarro, Marcos D. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S238000, C257SE21008
Reexamination Certificate
active
07488643
ABSTRACT:
A MIM capacitor device and method of making the device. The device includes an upper plate comprising one or more electrically conductive layers, the upper plate having a top surface, a bottom surface and sidewalls; a spreader plate comprising one or more electrically conductive layers, the spreader plate having a top surface, a bottom surface and sidewalls; and a dielectric block comprising one or more dielectric layers the dielectric block having a top surface, a bottom surface and sidewalls, the top surface of the dielectric block in physical contact with the bottom surface of the upper plate, the bottom surface of the dielectric block over the top surface of the spreader plate, the sidewalls of the upper plate and the dielectric block essentially co-planer.
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Coolbaugh Douglas Duane
Eshun Ebenezer E.
He Zhong-Xiang
Rassel Robert Mark
Anya Igwe U.
Cai Yuanmin
International Business Machines - Corporation
Pizarro Marcos D.
Schmeiser Olsen & Watts
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