MIM capacitor and method of fabricating the same

Details MIM capacitor and method of fabricating the same MIM capacitor and method of fabricating the same

2011-06-28

2011-06-28

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S333000

Reexamination Certificate

active

07968408

ABSTRACT:
A M-I-M capacitor semiconductor device capable of enhancing the reliability and capacitance of a capacitor and maximizing the integration density of the device, and a method of fabricating the same are disclosed. The semiconductor device includes a semiconductor substrate, a capacitor lower metal layer formed over the semiconductor substrate, a SiN capacitor dielectric layer having a thickness of approximately 30 nm or less formed over the capacitor lower metal layer, and a capacitor upper metal layer formed over a portion of the capacitor dielectric layer and overlapping with the capacitor lower metal layer.

REFERENCES:
patent: 5629043 (1997-05-01), Inaba et al.
patent: 2001/0016394 (2001-08-01), Koyanagi et al.
patent: 2003/0008467 (2003-01-01), Kai et al.
patent: 2005/0062130 (2005-03-01), Anthony Ciancio et al.

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