Microwave plasma reactor

Coating apparatus – Gas or vapor deposition – With treating means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118723E, 118723ME, 20429838, 156345, C23C 1600

Patent

active

055564755

ABSTRACT:
A microwave plasma reactor including a chamber for containing a gas to be energized into a plasma with microwave energy, an electrode having two surfaces in the chamber for radiating microwave energy from one of the surfaces into the chamber to form the plasma proximate the radiating surface, and a waveguide or coaxial conductor for introducing microwave energy onto the other of the two electrode surfaces for providing the energy to form the plasma.

REFERENCES:
patent: 4265730 (1981-05-01), Hirose et al.
patent: 4339326 (1982-07-01), Hirose et al.
patent: 4630566 (1986-12-01), Asmussen et al.
patent: 4767608 (1988-08-01), Matsumoto et al.
patent: 4919077 (1990-04-01), Oda et al.
patent: 4940015 (1990-07-01), Kobashi et al.
patent: 4989542 (1991-02-01), Mutsukazu
patent: 5021114 (1991-06-01), Saito
patent: 5034086 (1991-07-01), Sato
patent: 5061838 (1991-10-01), Lane et al.
patent: 5078851 (1992-01-01), Nishihata et al.
patent: 5105761 (1992-04-01), Charlet
patent: 5131992 (1992-07-01), Church et al.
patent: 5284544 (1994-02-01), Mizutani et al.
patent: 5342472 (1994-08-01), Imahashi
patent: 5389197 (1995-02-01), Ishimaru
Smith, Donald K., "Design and Operation of a 12 CM Diameter, 750 Watt Microwave Plasma Source, " Thesis submitted at University of Wisconsin-Madison-1976, pp. 1-29.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Microwave plasma reactor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microwave plasma reactor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microwave plasma reactor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-410652

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.