Microwave plasma processing process and apparatus

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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118723MW, 156345, C23C 1650, H01L 2100

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active

053645197

ABSTRACT:
A microwave plasma processing process and apparatus useful in the fabrication of integrated circuit (IC) or similar semiconductor devices, wherein the object or material to be processed, such as a semiconductor wafer, is processed with plasma generated using microwaves transmitted through a microwave transmission window disposed perpendicular to an electric field of the progressive microwaves in the waveguide.

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patent: 4265730 (1981-05-01), Hirose et al.
patent: 4298419 (1981-11-01), Suzuki et al.
patent: 4316791 (1982-02-01), Taillet
patent: 4330384 (1982-05-01), Okudaira et al.
patent: 4339326 (1982-07-01), Hirose et al.
patent: 4462863 (1984-07-01), Nishimatsu et al.
patent: 4512868 (1985-04-01), Fujimura
patent: 4563240 (1986-01-01), Shibata et al.
European Search Report, The Hague, Feb. 10, 1988.
Kraus, John D., Electromagentics, 1973 pp. 482-485.

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