Microwave plasma etching and deposition method employing first a

Details Microwave plasma etching and deposition method employing first a Microwave plasma etching and deposition method employing first a

1991-09-27

1993-04-20

Beck, Shrive

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 427571, 427577, 427575, B05D 306

Patent

active

052039595

ABSTRACT:
A plasma processing apparatus and method is equipped with a vacuum chamber, helmoltz coils, Ioffe bars, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber. Specifically, the method includes establishing a first magnetic field in the vacuum chamber substantially parallel to the direction of propagation of microwaves emitted in the chamber and establishing a second magnetic field substantially perpendicular to the first magnetic field. A substrate in the chamber for plasma processing is placed so that a surface of the substrate is substantially perpendicular to the direction of the first magnetic field and parallel to the direction of the second.

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Y. Arnal et al., "Plasma Etching in Magneric Multipole Microwave Discharge", Appl. Phys. Lett. 45(2) 15 Jul. 84, pp. 132-134.

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