Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1996-04-02
1999-10-05
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
156345, 20429838, H05H 100
Patent
active
059618515
ABSTRACT:
A method of removing material from a substrate, and a plasma discharge device wherein a plasma is excited by microwave energy having an electric field which is azimuthally and axially uniform in relation to the plasma tube. The microwave cavity is divided longitudinally into sections by conducting partitions, each of which is separately fed with microwave energy, and the plasma tube extends through openings in the partitions.
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Cox Gerald
Kamarehi Mohammad
Pingree Richard
Shi Jianou
Dang Thi
Fusion Systems Corporation
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