Microwave plasma deposition source and method of filling high as

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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Details

20429806, 20429811, 20429816, 20429812, C23C 1434

Patent

active

056883820

ABSTRACT:
A microwave plasma deposition source including a vacuum chamber for containing a substance to be energized in a plasma with microwave energy, a coaxial microwave feed ending in the chamber, a sputter target in the chamber and electrically isolated from the coaxial feed, and a second substrate spaced from the sputter target for defining a plasma volume between the substrates.

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