Microwave-frequency hybrid integrated circuit

Details Microwave-frequency hybrid integrated circuit Microwave-frequency hybrid integrated circuit

1999-07-26

2001-03-20

Hardy, David (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

C257S622000, C257S723000, C257S724000

Reexamination Certificate

active

06204555

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates in general to electronic engineering and more specifically to a microwave hybrid integrated circuit (IC).
BACKGROUND OF THE INVENTION
A microwave hybrid IC is known, the circuit comprising a dielectric board having a topological metallization pattern and semiconductor chips which are arranged in the substrate so that the face surface of each chip with contact pads are located in the same plane with the substrate surface, and the contact pads of the chips are electrically connected to the topological metallization pattern see U.S. Pat. No. 4,772,914.
The aforementioned hybrid IC, however, is possessed of a dispersion in the circuit electrical parameters resulted from variations in the length of interconnecting wires due to possible displacement of the semiconductor chip along the bottom of the recess from one of its walls towards the other one.
One more prior-art microwave hybrid IC is known, the circuit comprising a dielectric board with a topological metallization pattern and recesses, wherein the chips of the chip-type semiconductor devices are secured with the aid of a binder so that the face surface of the chips with the contact pads is coplanar with the board surface, and the contact pads of the chips are electrically connected to the topological metallization pattern (JP, B, 49-12794).
The aforecited hybrid IC is possessed of a low reproducibility of its electrical parameters due to chip displacement along the bottom of the recess during its fitting with the resultant variations in the length of interconnecting wires.
SUMMARY OF THE INVENTION
The principal object of the present invention is to provide a microwave hybrid integrated circuit, wherein the recesses are provided in the dielectric board, in which recesses the semiconductor chips being fixed, so as to allow enhancing the reproducibility and manufacturability of the electrical parameters of the IC.
The foregoing object is accomplished due to the fact that in a microwave hybrid IC, comprising a dielectric board provided with a topological metallization pattern and a number of recesses in which the semiconductor chips are fixed with a binder, the face surface of the chips provided with contact pads being coplanar with the board surface plane, while the contact pads of the chips are electrically connected to the topological metallization pattern, according to the present invention, the walls of each recess are inclined towards the board surface at an angle of 90.1 to 150°.
Making the angle of inclination of the walls towards the plane of the board surface less than 90.1° does not give any positive results and making said angle more than 150° elongates substantially the length of connecting leads and hence the spurious inductance.
The recesses may be metallized and the metal coating may be electrically connected to the topological metallization of the board. The board may be provided with the shield grounding metallization on its back side, and in the bottom of the recesses the metallized holes may be made, filled with an electrically and heat conducting material, for connection with the shield grounding metallization.
Performing the walls of the recesses inclined towards the plane of the board surface at an angle &agr;=90.1 to 150° ensures:
first, restricting the possibility of chip displacement along the bottom of the recesses and hence reducing the variation in the length of conductors interconnecting the contact pads with the topological metallization and therefore enhancing reproducibility of the circuit electrical parameters;
second, enhancing the accuracy of the chip fitting in the recess and its orienting therein, as well as simpliying the electric connection between metallization of the recess and the topological metallization, thereby increasing the manufacturability.


REFERENCES:
patent: 5157479 (1992-10-01), Sekiguchi et al.
patent: 5814883 (1998-09-01), Sawai

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