Microwave-excited plasma processing apparatus

Coating apparatus – Gas or vapor deposition – With treating means

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C156S345410, C156S345420, C156S345460, C156S345490

Reexamination Certificate

active

07392760

ABSTRACT:
A microwave-excited plasma processing apparatus shows a wide pressure range and a wide applicable electric power range for normal electric discharges as a result of using slits cut through a rectangular waveguide and having a profile that allows the electric field and the magnetic field of microwave to be formed uniformly right below the microwave introducing window below an microwave antenna. The microwave-excited plasma processing apparatus is characterized by having four elliptic slits cut through the wall of the rectangular waveguide that is held in contact with the microwave introducing window of the top wall of the vacuum chamber, the four elliptic slits being arranged respectively along the four sides of a substantial square.

REFERENCES:
patent: 3680142 (1972-07-01), Van Atta et al.
patent: 4160145 (1979-07-01), Rueggeberg
patent: 4463239 (1984-07-01), Miller
patent: 5874715 (1999-02-01), Choi
patent: 6343565 (2002-02-01), Hongoh
patent: 6607633 (2003-08-01), Noguchi
patent: 0 591 975 (1994-04-01), None
patent: 0 688 038 (1995-12-01), None
patent: 0 771 017 (1997-05-01), None
patent: 9-129613 (1997-05-01), None
patent: 11-111620 (1999-04-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Microwave-excited plasma processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microwave-excited plasma processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microwave-excited plasma processing apparatus will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3971654

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.