Microwave curing of photoresist films

Details Microwave curing of photoresist films Microwave curing of photoresist films

1978-12-22

1981-01-06

Kimlin, Edward C.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

34 4, 34 39, 427 451, 427 46, 4273881, 430313, 430327, 430328, 430330, 430935, G03C 500

Patent

active

042437440

ABSTRACT:
Microwave curing of photoresist films employed in processing semiconductor wafers provides an alternative to conventional drying techniques. The time of curing may be reduced from about 20 to 25 minutes required for conventional air drying to about 5 minutes employing microwave curing. Further, the photoresist film is the only part of the semiconductor assembly that experiences elevated temperatures. The remainder of the wafer remains near ambient conditions, without experiencing possible deleterious effects as a consequence of the high temperature processing.

REFERENCES:
patent: 3861922 (1975-01-01), Minoda
patent: 3884692 (1975-05-01), Minagawa
patent: 3957515 (1976-05-01), Robillard
patent: 4055001 (1977-10-01), Forster et al.
patent: 4086373 (1978-04-01), Tobias et al.
patent: 4120722 (1978-10-01), Okamoto et al.
patent: 4149322 (1979-04-01), Minoda et al.
patent: 4154612 (1979-05-01), Minoda et al.
Karp, "Curing Photoresist Using Microwave Energy",1970 International Hybrid Microelectronics Symposium, Nov. 1970.

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