Microstructured pattern inspection method

Radiant energy – Inspection of solids or liquids by charged particles – Electron probe type

Reexamination Certificate

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Details

C250S311000, C250S307000, C250S306000, C250S491100, C430S004000, C430S005000, C382S145000

Reexamination Certificate

active

07435959

ABSTRACT:
The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

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Japanese Office Action dated May 9, 2006 with English translation thereof.
Japanese Office Action dated Jan. 8, 2008 with English translations of Notification of Reasons for Rejection and claims of JPA 2007-19522.

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