Microstructure modification in copper interconnect structure

Details Microstructure modification in copper interconnect structure Microstructure modification in copper interconnect structure

2008-02-14

2010-11-30

Luu, Chuong A. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C257S758000, C257S762000

Reexamination Certificate

active

07843063

ABSTRACT:
Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in the inventive metal interconnect structure shut down copper grain boundary diffusion. The composition of the metal interconnect structure after grain growth contains from about 1 ppm to about 10% of cobalt in atomic concentration. Grain boundaries extend from a top surface of a copper-cobalt alloy line to a bottom surface of the copper-cobalt alloy line, and are separated from any other grain boundary by a distance greater than a width of the copper-cobalt alloy line.

REFERENCES:
patent: 3615922 (1971-10-01), Alyea
patent: 4915903 (1990-04-01), Brupbacher et al.
patent: 6043153 (2000-03-01), Nogami et al.
patent: 6181012 (2001-01-01), Edelstein et al.
patent: 6268291 (2001-07-01), Andricacos et al.
patent: 6429523 (2002-08-01), Andricacos et al.
patent: 6642146 (2003-11-01), Rozbicki et al.
patent: 7180188 (2007-02-01), Oh et al.
patent: 7235884 (2007-06-01), McElheny et al.
patent: 2002/0076925 (2002-06-01), Marieb et al.
patent: 2006/0113685 (2006-06-01), Ueki et al.
patent: 1094515 (2001-04-01), None
patent: 1744358 (2007-01-01), None
patent: 2001118848 (2001-04-01), None
patent: WO0245142 (2002-06-01), None
Harper et al., “Crystallographic Texture Change During Abnormal Grain Growth in Cu-Co Thin Films”, Appl. Phys. Lett., vol. 65, No. 2, Jul. 11, 2004.
Harper, J. M. E., et al., “Microstructure Control in Semiconductor Metallization”, Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), AIP for American Vacuum Soc., Jul. 4, 1997, vol. 15, No. 4, pp. 763-779.

Affiliated with

Also associated with

Rating

Microstructure modification in copper interconnect structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microstructure modification in copper interconnect structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microstructure modification in copper interconnect structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4252485