Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-25
2009-08-11
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S621000, C438S623000, C438S655000, C438S664000, C438S682000, C257SE21174, C257SE21581, C257SE21584, C257SE21586, C257SE21589, C257SE23142, C257SE23145, C257SE23152
Reexamination Certificate
active
07572723
ABSTRACT:
A semiconductor process is taught for performing electroless plating of copper overlying at least a portion of a layer comprising cobalt, nickel, or both cobalt and nickel. The cobalt and/or nickel comprising layer may be formed using electroless plating. For some embodiments, a tin layer is then formed overlying the copper. The tin layer may be formed using immersion plating or electroless plating. A micropad may comprise the cobalt and/or nickel comprising layer and the copper layer. In some embodiments, the micropad may also comprise the tin layer. In one embodiment, the micropad may be compressed at an elevated temperature to form a copper tin intermetallic compound which provides an interconnect between a plurality of semiconductor devices.
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Acosta Eddie
Chatterjee Ritwik
Garcia Sam S.
Mathew Varughese
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Hill Susan C.
Lebentritt Michael S
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