Micromechanical diaphragm sensor having a double diaphragm

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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Details

C438S048000, C438S421000, C438S700000, C257SE21553, C257SE21573, C257SE21581

Reexamination Certificate

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07863072

ABSTRACT:
A method for producing a micromechanical diaphragm sensor, and a micromechanical diaphragm sensor produced with the method. The micromechanical diaphragm sensor has at least one first diaphragm as well as a second diaphragm, which is disposed essentially on top of the first diaphragm. Furthermore, the micromechanical diaphragm sensor has a first cavity and a second cavity, which is essentially disposed above the first cavity.

REFERENCES:
patent: 4665610 (1987-05-01), Barth et al.
patent: 6306773 (2001-10-01), Adås et al.
patent: 2005/0082626 (2005-04-01), Leedy
patent: 102 00 40 433 56 (2006-03-01), None
patent: 1 043 770 (2000-10-01), None
patent: 1 441 561 (2004-07-01), None

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