Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2005-03-03
2009-02-24
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C438S053000, C073S717000, C361S283400
Reexamination Certificate
active
07495302
ABSTRACT:
A micromechanical component having a diaphragm is provided, the structure of which effectively prevents the penetration of dirt particles into the cavity. A method for manufacturing such a component is also provided. The structure of the component is implemented in a layer structure which includes at least one first sacrificial layer and a layer system over the first sacrificial layer. A cavity is formed in the first sacrificial layer underneath the diaphragm. In the region of the diaphragm between the upper layer and the lower layer of the layer system situated directly above the first sacrificial layer, at least one access channel to the cavity is formed which has at least one opening in the upper layer and at least one opening in the lower layer, the opening in the upper layer and the opening in the lower layer being offset with respect to each other.
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patent: 2003/0215974 (2003-11-01), Kawasaki et al.
patent: 103 05 442 (2004-08-01), None
Artmann Hans
Fischer Frank
Gonska Julian
Hoechst Arnim
Metzger Lars
Fulk Steven J.
Kenyon & Kenyon LLP
Menz Douglas M
Robert & Bosch GmbH
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