Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2005-09-07
2008-10-14
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S637000, C438S680000, C257SE21170, C257SE21222, C257SE21132, C257SE21249, C257SE21278
Reexamination Certificate
active
07435691
ABSTRACT:
A micromechanical component having a silicon substrate; a cavity provided in the substrate; and a diaphragm, provided on the surface of the substrate, which closes the cavity; the diaphragm featuring a silicon-oxide layer having an opening that is formed by silicon-oxide wedges pointing to each other; and the diaphragm having at least one closing layer which closes the opening. Also, a suitable manufacturing method.
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Kenyon & Kenyon LLP
Nhu David
Robert & Bosch GmbH
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