Micromachine manufacture using gas beam crystallization

Details Micromachine manufacture using gas beam crystallization Micromachine manufacture using gas beam crystallization

1997-08-25

2000-08-22

Gulakowski, Randy

Etching a substrate: processes

Etching of semiconductor material to produce an article...

438 52, 438 53, 117 9, H01L 21302

Patent

active

061067342

ABSTRACT:
In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diaphragm which is made of a single-crystalline material can be easily manufactured through no junction.

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