Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-18
2007-09-18
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S598000, C438S599000, C438S612000, C438S618000, C438S667000, C257SE21590, C257SE21641
Reexamination Certificate
active
11218254
ABSTRACT:
Methods for forming a redistribution layer on microfeature workpieces, and microfeature workpieces having such a redistribution layer are disclosed herein. In one embodiment, a method includes constructing a dielectric structure on a microfeature workpiece having a substrate and a terminal carried by the substrate, and removing a section of the dielectric structure to form an opening. The opening has a first portion extending through the dielectric structure and exposing the terminal and a second portion extending to an intermediate depth in the dielectric structure. The second portion is spaced laterally apart from the terminal. The method further includes forming a conductive layer on the microfeature workpiece with the conductive layer in electrical contact with the terminal and disposed in the first and second portions of the opening.
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Fishburn Fred
Gugel Troy
Lee John
Tang Sanh D.
Estrada Michelle
Micro)n Technology, Inc.
Perkins Coie LLP
Stark Jarrett J
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