Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-14
2006-02-14
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S933000
Reexamination Certificate
active
06998312
ABSTRACT:
A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally include an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying a bias across the electrodes, and thus information may be stored using the structure.
REFERENCES:
patent: 5914893 (1999-06-01), Kozicki et al.
patent: 6418049 (2002-07-01), Kozicki et al.
patent: 6487106 (2002-11-01), Kozicki
patent: 6635914 (2003-10-01), Kozicki et al.
Kozicki Michael N.
Mitkova Maria
Axon Technologies Corporation
Nhu David
Snell & Wilmer L.L.P.
LandOfFree
Microelectronic programmable device and methods of forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Microelectronic programmable device and methods of forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microelectronic programmable device and methods of forming... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3678978