Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-06-13
2006-06-13
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S710000, C257S723000, C257S924000
Reexamination Certificate
active
07061099
ABSTRACT:
Microelectronic packages having chambers and sealing materials, and methods of making the packages, and sealing the chambers, are disclosed. An exemplary package may include a first surface, a second surface, a solid sealing material including an intermetallic compound, such as, for example, of gallium or another relatively low melting material, between the first surface and the second surface, and a chamber defined by the first surface, the second surface, and the sealing material. An exemplary method may include disposing a ring of a sealing material including a liquid metal between a first surface and a second surface to define a chamber between the first surface, the second surface, and the ring of the sealing material, and sealing the chamber by heating the sealing material to react the liquid metal with a metal that is capable of forming an intermetallic compound with the liquid metal.
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Heck John
Lu Daoqiang
Blakely , Sokoloff, Taylor & Zafman LLP
Clark Jasmine
Intel Corporation
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