Microelectronic devices having increased impurity concentration

Details Microelectronic devices having increased impurity concentration Microelectronic devices having increased impurity concentration

1997-07-24

2000-02-15

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257734, 257767, H01L 2980

Patent

active

060256176

ABSTRACT:
A microelectronic device includes a first region having a first conductivity type. A second region having a second conductivity type contacts the first region at a junction therebetween. A metal silicide region contacts the second region at a contact surface apart from the junction. Impurities of the second conductivity type in the second region are concentrated between the contact surface and the junction, for example, in one or more subregions disposed between the contact surface and the junction. The subregions may include a first subregion adjacent the junction formed by an ion implantation at a first energy level, and a second subregion disposed between the first subregion and the contact surface formed by a second ion implantation at a different energy level. Related fabrication methods are also provided.

REFERENCES:
patent: 5672890 (1997-09-01), Nakajima
patent: 5719425 (1998-02-01), Akram et al.
patent: 5856693 (1999-01-01), Onishi

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