Microelectronic device and a method for its manufacture

Details Microelectronic device and a method for its manufacture Microelectronic device and a method for its manufacture

2004-11-22

2009-06-16

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S429000, C438S700000, C257SE21633, C257SE21642

Reexamination Certificate

active

07547605

ABSTRACT:
Provided are a microelectronic device and a method for its manufacture. In one example, the method includes providing a semiconductor substrate layer having a first material (e.g., silicon or silicon germanium). An insulating layer is formed on the semiconductor substrate layer with multiple openings exposing portions of the surface of the semiconductor substrate layer. A semiconductor layer is then formed in the openings directly upon the exposed portions of the semiconductor substrate layer using a second material different from the first material (e.g., silicon germanium or silicon). In other examples, multiple semiconductor layers may be formed using alternating materials.

REFERENCES:
patent: 4758531 (1988-07-01), Beyer et al.
patent: 5073810 (1991-12-01), Owada et al.
patent: 5086011 (1992-02-01), Shiota
patent: 5212110 (1993-05-01), Pfiester et al.
patent: 5600161 (1997-02-01), Gonzalez et al.
patent: 5763314 (1998-06-01), Chittipeddi
patent: 5994724 (1999-11-01), Morikawa
patent: 6111267 (2000-08-01), Fischer et al.
patent: 6190975 (2001-02-01), Kubo et al.
patent: 6319772 (2001-11-01), Tee et al.
patent: 6384437 (2002-05-01), Tee et al.
patent: 6429061 (2002-08-01), Rim
patent: 6455871 (2002-09-01), Shim et al.
patent: 6479354 (2002-11-01), Moon
patent: 6482705 (2002-11-01), Yu
patent: 6492216 (2002-12-01), Yeo et al.
patent: 6503812 (2003-01-01), Menut et al.
patent: 6621131 (2003-09-01), Murthy et al.
patent: 6630710 (2003-10-01), Augusto
patent: 6703271 (2004-03-01), Yeo et al.
patent: 6707132 (2004-03-01), Banerjee et al.
patent: 6787423 (2004-09-01), Xiang
patent: 6951796 (2005-10-01), Sakaguchi
patent: 2003/0077882 (2003-04-01), Shih et al.
patent: 2003/0162348 (2003-08-01), Yeo et al.
patent: 2003/0207571 (2003-11-01), Fitzgerald et al.
John C. Hughes et al., “Effects of Epitaxial Silicon Technology on the Manufacturing Performance of Wafer Fabrication Lines”, 1998, pp. 333-336, 0-7803-4523-1/98, IEEE/CMPT Int'l Electronics Manufacturing Technology Symposium.
Shannon Chen et al., “Yield of Silicon Selective Epitaxial Growth And Its Role In The Production Planning And Control Of Three-Dimensional Semiconductor Devices”, 1996, pp. 212-217, 0-7803-3642/96, IEEE/CMPT Int'l Electronics Manufacturing Technology Symposium.
Xiang-Zheng Bo, et al., “Spatially Selective Single-Grain Silicon Films Induced By Hydrogen Plasma Seeding”, May/Jun. 2002, pp. 818-821, 1071-1023/2002/20(3)/818/4, J. Vac. Sci. Technol. B 20(3), American Vacuum Sociey.
www.fz-juelch.de/isg/lpcvd/lv4.html, 3 pages, May, 2004.
Hsiang-Jen Huang et al., “Improved Low Temperature Characteristics of P-Channel MOSFETs With Si1-xGexRaised Source Drain”, Aug. 2001, pp. 1627-1632, vol. 48, No. 8, 0018-9383/01, IEEE Trasactions on Electrical Devices.
http://ece.www.ecn.purdue.edu/ECE/Research/ARS/ARS98/PART—I/Section7/7—24, School of Electrical & Computer Engineering—Annual Research Summary, 2 pages, Jul. 1, 1997-Jun. 30, 1998.

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