Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2005-10-04
2005-10-04
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S414000, C257S417000, C257S419000, C438S050000, C438S051000, C438S052000, C073S715000, C073S718000
Reexamination Certificate
active
06952042
ABSTRACT:
A microelectromechanical device and method of fabricating the same, including a layer of patterned and deposited metal or mechanical-quality, doped polysilicon inserted between the appropriate device element layers, which provides a conductive layer to prevent the microelectromechanical device's output from drifting. The conductive layer may encapsulate of the device's sensing or active elements, or may selectively cover only certain of the device's elements. Further, coupling the metal or mechanical-quality, doped polysilicon to the same voltage source as the device's substrate contact may place the conductive layer at the voltage of the substrate, which may function as a Faraday shield, attracting undesired, migrating ions from interfering with the output of the device.
REFERENCES:
patent: 4463336 (1984-07-01), Black et al.
patent: 4771639 (1988-09-01), Saigusa et al.
patent: 6441451 (2002-08-01), Ikeda et al.
patent: 6465856 (2002-10-01), Gulvin et al.
patent: 09061456 (1997-03-01), None
Stark, B.H. et al., “An Ultra-Thin Hermetic Package Utilizing Electroplated Gold” Tranducers ' 01 Eurosensors XV. 11thInternational Conference On Solid-State Sensors and Actuators. Digest of Technical Papers. Munich, Jun. 10-14, 2001, International Conference On Solid-State Sensors and Actuators. Digest of Technical Papers, BER, vol. 1, Jun. 10, 2001 pp. 194-197, XP002252460. ISBN:3-540-42150-5.
Gardner Gary R.
Rahn Curtis H.
Stratton Thomas G.
Honeywell International , Inc.
Kang Donghee
McDonnell Boehnen & Hulbert & Berghoff LLP
LandOfFree
Microelectromechanical device with integrated conductive shield does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Microelectromechanical device with integrated conductive shield, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microelectromechanical device with integrated conductive shield will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3469110