Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-07
2006-02-07
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000
Reexamination Certificate
active
06995433
ABSTRACT:
A microdevice for forming a part of an integrated circuit and method for fabricating are disclosed. The microdevice can include a first conductive region and a second conductive region having a channel region interposed therebetween. The mircodevice has a channel region controlling component disposed over the channel region and separated therefrom by at least one dielectric layer. The channel region controlling component has a non-linear structural characteristic derived from a non-linear structural characteristic of a photo resist feature used as an etch mask for the channel region controlling component.
REFERENCES:
patent: 5777360 (1998-07-01), Rostoker et al.
patent: 6229163 (2001-05-01), Calafut
Capodieci Luigi
Lukanc Todd P.
McGowan Sarah N.
Reiss Joerg
Singh Bhanwar
Advanced Micro Devices , Inc.
Ho Tu-Tu
Renner , Otto, Boisselle & Sklar, LLP
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