Microcrystalline silicon thin film transistor

Details Microcrystalline silicon thin film transistor Microcrystalline silicon thin film transistor

2008-09-04

2011-12-13

Landau, Matthew (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

C438S482000, C257S057000, C257SE29003, C257SE21102

Reexamination Certificate

active

08076222

ABSTRACT:
Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a first gas mixture having a hydrogen containing gas to a silicon containing gas flow rate ratio greater than about 200:1 into the processing chamber, maintaining a first process pressure greater than about 6 Torr in the processing chamber to deposit a first microcrystalline silicon containing layer in presence of a plasma formed from the first gas mixture, supplying a second gas mixture into the processing chamber, and maintaining a second process pressure less than about 5 Torr in the processing chamber to deposit a second microcrystalline silicon containing layer in presence of a plasma formed from the second gas mixture.

REFERENCES:
patent: 5294811 (1994-03-01), Aoyama et al.
patent: 5942050 (1999-08-01), Green et al.
patent: 6190932 (2001-02-01), Yoshimi et al.
patent: 6200825 (2001-03-01), Yoshimi et al.
patent: 6265288 (2001-07-01), Okamoto et al.
patent: 6297443 (2001-10-01), Nakajima et al.
patent: 6309906 (2001-10-01), Meier et al.
patent: 6326304 (2001-12-01), Yoshimi et al.
patent: 6329270 (2001-12-01), Voutsas
patent: 6337224 (2002-01-01), Okamoto et al.
patent: 6566159 (2003-05-01), Sawada et al.
patent: 6963120 (2005-11-01), Shiozaki et al.
patent: 6989553 (2006-01-01), Yokogawa et al.
patent: 7074641 (2006-07-01), Kondo et al.
patent: 7314526 (2008-01-01), Preti et al.
patent: 2002/0033191 (2002-03-01), Kondo et al.
patent: 2003/0127127 (2003-07-01), Inamasu et al.
patent: 2004/0082097 (2004-04-01), Lohmeyer et al.
patent: 2004/0238851 (2004-12-01), Flores et al.
patent: 2005/0251990 (2005-11-01), Choi et al.
patent: 2006/0060138 (2006-03-01), Keller et al.
patent: 2006/0240630 (2006-10-01), Bauer et al.
patent: 2007/0039942 (2007-02-01), Leung et al.
patent: 2007/0298590 (2007-12-01), Choi et al.
patent: 2009/0029532 (2009-01-01), Huang et al.
patent: 0 994 515 (2000-04-01), None
patent: 2007-262541 (2007-10-01), None
patent: 2006-0077554 (2006-07-01), None
International Search Report and Written Opinion of PCT/US07/71703, dated Dec. 6, 2007.
O. Vetterl, et al “Preparation Temperature Effects in Microcrystalline Silicon Thin Film Solar Cells”, Mat. Res Soc. Symp. Proc. vol. 664 p. A 25.8.1-A 25.8.6, 2001.
Stefan Klein, et al “Microcrystaline Silicon Prepared by Hot-Wire Chemical Vapor Deposition for Thin Film Solar Cell Applications”, Jpn J. Appl. Phys. vol. 41(2002)pp. L 10-12, Jan. 2002.
S. Klein, et al “High Efficiency Thin Film Solar Cells with Intrinsic Microcrystaline Silicon Prepared by Hot Wire CVD” Mat. Res. Soc. Symp. Proc. vol. 715 @ 2002 Materials Research Society, pp. A26.2. 1-A 26.2.6.
Ujjwal K. Das et al “Amorphous and Microcrystaline silicon Solar Cells Grown by Pulsed PECVD Technique”, Mat. Res. Soc. Symp. Proc. vol. 715 @ 2002 Materials Research Society pp. A. 26.6. 1-A 26.6.6.
PCT International Search Report and Written Opinion of PCT/US2009/030865, dated Jun. 29, 2009.

Affiliated with

Also associated with

Rating

Microcrystalline silicon thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microcrystalline silicon thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microcrystalline silicon thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4295900