Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2007-04-03
2007-04-03
Richards, N. Drew (Department: 2815)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S471000
Reexamination Certificate
active
10379749
ABSTRACT:
One aspect of the present subject matter relates to a method for forming strained semiconductor film. In various embodiments, a single crystalline semiconductor film is formed on a substrate surface, and a recess is created beneath the film. A portion of the film is influenced into the void and strained. In various embodiments, the naturally-occurring Van der Waal's force is sufficient to influence the film into the void. In various embodiments, a nano-imprint mask is used to assist with influencing the film into the void. In various embodiments, an oxide region is formed in a silicon substrate, and a single crystalline silicon film is formed on the semiconductor substrate and on at least a portion of the oxide region. The oxide region is removed allowing the Van der Waal's force to bond the film to the silicon substrate. Other aspects are provided herein.
REFERENCES:
patent: 5098852 (1992-03-01), Niki et al.
patent: 5234535 (1993-08-01), Beyer et al.
patent: 5441591 (1995-08-01), Imthurn et al.
patent: 5461243 (1995-10-01), Ek et al.
patent: 5673223 (1997-09-01), Park
patent: 5691230 (1997-11-01), Forbes
patent: 5759898 (1998-06-01), Ek et al.
patent: 5854501 (1998-12-01), Kao
patent: 5877070 (1999-03-01), Goesele et al.
patent: 5879996 (1999-03-01), Forbes
patent: 5949102 (1999-09-01), Saida et al.
patent: 5963817 (1999-10-01), Chu et al.
patent: 6093623 (2000-07-01), Forbes
patent: 6096433 (2000-08-01), Kikuchi et al.
patent: 6103598 (2000-08-01), Yamagata et al.
patent: 6110793 (2000-08-01), Lee et al.
patent: 6136666 (2000-10-01), So
patent: 6143628 (2000-11-01), Sato et al.
patent: 6162657 (2000-12-01), Schiele et al.
patent: 6228694 (2001-05-01), Doyle et al.
patent: 6251751 (2001-06-01), Chu et al.
patent: 6261876 (2001-07-01), Crowder et al.
patent: 6274457 (2001-08-01), Sakai et al.
patent: 6274460 (2001-08-01), Delgado et al.
patent: 6309950 (2001-10-01), Forbes
patent: 6328796 (2001-12-01), Kub et al.
patent: 6377070 (2002-04-01), Forbes
patent: 6424001 (2002-07-01), Forbes et al.
patent: 6448601 (2002-09-01), Forbes et al.
patent: 6455397 (2002-09-01), Belford
patent: 6476434 (2002-11-01), Noble et al.
patent: 6478883 (2002-11-01), Tamatsuka et al.
patent: 6486008 (2002-11-01), Lee
patent: 6496034 (2002-12-01), Forbes et al.
patent: 6497763 (2002-12-01), Kub et al.
patent: 6514836 (2003-02-01), Belford
patent: 6515335 (2003-02-01), Christiansen et al.
patent: 6531727 (2003-03-01), Forbes et al.
patent: 6541356 (2003-04-01), Fogel et al.
patent: 6559491 (2003-05-01), Forbes et al.
patent: 6566682 (2003-05-01), Forbes
patent: 6583052 (2003-06-01), Shin et al.
patent: 6583437 (2003-06-01), Mizuno et al.
patent: 6593625 (2003-07-01), Christiansen et al.
patent: 6597203 (2003-07-01), Forbes
patent: 6620683 (2003-09-01), Lin et al.
patent: 6649476 (2003-11-01), Forbes
patent: 6649492 (2003-11-01), Chu et al.
patent: 6656782 (2003-12-01), Skotnicki et al.
patent: 6656822 (2003-12-01), Doyle et al.
patent: 6703293 (2004-03-01), Tweet et al.
patent: 6703648 (2004-03-01), Xiang et al.
patent: 6740913 (2004-05-01), Doyle et al.
patent: 6812508 (2004-11-01), Fukumi
patent: 2002/0001965 (2002-01-01), Forbes
patent: 2002/0135020 (2002-09-01), Skotnicki et al.
patent: 2002/0163045 (2002-11-01), Farrar
patent: 2002/0185686 (2002-12-01), Christiansen et al.
patent: 2003/0013323 (2003-01-01), Hammond et al.
patent: 2003/0201468 (2003-10-01), Christiansen et al.
patent: 2003/0218189 (2003-11-01), Christiansen et al.
patent: 2003/0227072 (2003-12-01), Forbes
patent: 2004/0171196 (2004-09-01), Walitzki
patent: 2004/0214366 (2004-10-01), Segal et al.
patent: 2004/0217391 (2004-11-01), Forbes
patent: 2005/0017273 (2005-01-01), Forbes et al.
patent: 2005/0020094 (2005-01-01), Forbes et al.
patent: 2005/0023529 (2005-02-01), Forbes
patent: 2005/0023612 (2005-02-01), Forbes
patent: 2005/0023616 (2005-02-01), Forbes
patent: 2005/0029619 (2005-02-01), Forbes
patent: 2005/0029683 (2005-02-01), Forbes et al.
patent: 2005/0032296 (2005-02-01), Forbes
patent: 54152464 (1979-11-01), None
patent: 54155770 (1979-12-01), None
patent: 2001-093887 (2001-04-01), None
Abstract—Electronic Materials Conference,(Jun. 2002), p. 9.
“Cornell Demonstrates a Universal Substrate”,Compound Semiconductor, 3(2), (Mar./Apr. 1997), pp. 27-29.
Auberton-Herve, “SOI: Materials to Systems”,Digest of the International Electron Device Meeting,(1996), pp. 1.1.1-1.1.8.
Autumn, Kellar , et al., “Adhesive force of a single gecko foot-hair”,Nature, 405(6787), (Jun. 2000), pp. 681-685.
Autumn, Kellar , et al., “Evidence for van der Waals adhesion in gecko setae”,PNAS Early Edition,(2002), 5 pages.
Belford, Rona E., et al., “Performance-Augmented CMOS Using Back-End Uniaxial Strain”,IEEE Device Research Conference,(2002), pp. 41-42.
Brown, Chappell , “Bonding twist hints at universal substrate”,eeTimes,(1997), 2 pages.
Bruel, M , et al., “Smart-Cut: a new silicon on insulator material technology based on hydrogen implantation and wafer bonding”,Japanese Journal of Applied Physics, Part 1(Regular Papers, Short Notes&Review Papers), 36(3B), (1997), pp. 1636-1641.
Chen, Xiandong , et al., “Vertical P-MOSFETs with heterojunction between source/drain and channel”,IEEE Device Research Conference, (2000),25-26.
Clark, Don , et al., “Intel unveils tiny new transistors: Process handles circuits 1/2000th the width of a human hair”,The Wall Street Journal, (Aug. 13, 2000), 4 pages.
Clifton, P A., et al., “A process for strained silicon n-channel HMOSFETs”,Proceedings of the 26th European Solid State Device Research Conference, (Sep. 1996), Abstract.
Fischetti, M V., et al., “Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys”,Journal of Applied Physics, 80(4), (Aug. 15, 1996), pp. 2234-2252.
Kalavade, P. , “A Novel sub-10nm Transistor”,IEEE Device Research Conference, Denver, Co.,(2000), pp. 71-72.
Loo, Y L., et al., “Contact Printing With Nanometer Resolution”,Bell Laboratories, Lucent Technologies, (Jun. 2002), pp. 149-150.
Mizuno, T , et al., “Advanced SOI-MOSFETs with Strained-Si Channel for High Speed CMOS Electron/Hole Mobility Enhancement”,2000 Symposium on VLSI Technology. Digest of Technical Papers, (2000), pp. 210-211.
O'Neill, A G., et al., “High speed deep sub-micron MOSFET using high mobility strained silicon channel”,Proceedings of the 25th European Solid State Device Research Conference, (Sep. 1995), Abstract.
Ouyang, Q , et al., “Bandgap Engineering in Deep Submicron Vertical pMOSFETs”,IEEE Device Research Conference, (2000), pp. 27-28.
People, R. , “Calculation of critical layer thickness versus lattice mismatch for GexSi1-x/Si strained-layer heterostructures”,Applied Physics Letters, 47(3), (Aug. 1, 1985), pp. 322-324.
Rim, Kern , et al., “Fabrication and analysis of deep submicron strained-Si n- MOSFET's”,IEEE Transactions on Electron Devices, 47(7), (Jul. 2000), pp. 1406-1415.
Rim, K. , et al., “Strained Si NMOSFETs for High Performance CMOS Technology”,2001 Symposium on VLSI Technology. Digest of Technical Papers, (2001), pp. 59-60.
Rim, Kern , et al., “Transconductance enhancement in deep submicron strained Si n-MOSFETs”,International Electron Devices Meeting 1998. Technical Digest, (1998), pp. 707-710.
Sugiyama, N , et al., “Formation of strained-silicon layer on thin relaxed- SiGe/SiO/sub 2//Si structure using SIMOX technology”,Thin Solid Films, 369(1-2), (Jul. 2000), pp. 199-202.
Takagi, Shin-Ichi , “Strained-Si- and SiGe-On-Insulator (Strained-SOI and SGOI) MOSFETs for High Performance/Low Power CMOS Application”,IEEE Device Research Conference, (2002), pp. 37-40.
Welser, J , et al., “Strain dependence of the performance enhancement in strained-Si n-MOSFETs”,International Electron Devices Meeting 1994. Technical Digest, (1994), pp. 15.2.1-15
Richards N. Drew
Schwegman Lundberg Woessner & Kluth P.A.
LandOfFree
Micro-mechanically strained semiconductor film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Micro-mechanically strained semiconductor film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Micro-mechanically strained semiconductor film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3783756