Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-11-13
2007-11-13
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C372S099000, C372S101000, C372S050100, C372S049010, C372S046010, C372S096000, C372S024000
Reexamination Certificate
active
09982086
ABSTRACT:
A micro-lens built-in vertical cavity surface emitting laser (VCSEL) includes a substrate and a lower reflector formed on the substrate. An active layer is formed on the lower reflector, generating light by a recombination of electrons and holes. An upper reflector is formed on the active layer including a lower reflectivity than that of the lower reflector. A micro-lens is disposed in a window region through which the laser beam is emitted. A lens layer is formed on the upper reflector with a transparent material transmitting a laser beam; the lens layer includes the micro-lens. An upper electrode is formed above the upper reflector excluding the window region a lower electrode formed underneath the substrate.
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Lee Jae-hoon
Lee Jeong-kwan
Crane Sara
Gebremariam Samuel A.
Samsung Electronics Co,. Ltd.
Stein, McEwen & Bui LLP
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