Method of manufacturing a floating gate of a flash memory...

Details Method of manufacturing a floating gate of a flash memory... Method of manufacturing a floating gate of a flash memory...

2007-11-20

2007-11-20

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S619000, C438S421000, C438S422000, C257SE21564, C257SE23013

Reexamination Certificate

active

11434414

ABSTRACT:
A method of forming a floating gate of a flash memory device wherein a hard mask nitride film is stripped using two or more etching steps. Accordingly, a seam can be prevented when depositing a floating gate polysilicon film. Furthermore, the floating gate polysilicon film may be blanket-etched to make rounded upper edge portions of the floating gate polysilicon film. In this way, a void can be prevented when depositing a control gate polysilicon.

REFERENCES:
patent: 6838342 (2005-01-01), Ding
patent: 2003/0082876 (2003-05-01), Mandelman et al.

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