Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-01-28
2009-06-30
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S188000, C257SE21131, C257SE21431, C257SE21634
Reexamination Certificate
active
07553718
ABSTRACT:
A method (100) of forming semiconductor structures (202) including high-temperature processing steps (step118), incorporates the use of a high-temperature nitride-oxide mask (220) over protected regions (214) of the device (202). The invention has application in many different embodiments, including but not limited to, the formation of recess, strained device regions (224).
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Bu Haowen
Chidambaram Periannan
Grider Douglas T.
Khamankar Rajesh
Brady III W. James
Garner Jacqueline J.
Lebentritt Michael S
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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