Methods of uniformity control for low flow process and...

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C427S569000

Reexamination Certificate

active

07829145

ABSTRACT:
Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the method for processing a substrate includes delivering a processing gas into a chemical vapor deposition chamber through a first gas pathway that includes flow through a first plurality of apertures in a blocker plate, the blocker plate creating a pressure drop of at least approximately 0.8 torr thereacross, reacting the processing gas to deposit a material on a substrate surface, removing the substrate from the chamber, delivering a cleaning gas into the chamber through a second gas pathway around the blocker plate bypassing the blocker plate and through a second plurality of apertures formed in the blocker plate, and reacting the cleaning gases with deposits within the chamber to etch the deposits from the chamber.

REFERENCES:
patent: 5360144 (1994-11-01), Slade
patent: 5532190 (1996-07-01), Goodyear et al.
patent: 5725675 (1998-03-01), Fong et al.
patent: 5741363 (1998-04-01), Van Buskirk et al.
patent: 5844195 (1998-12-01), Fairbairn et al.
patent: 5871586 (1999-02-01), Crawley et al.
patent: 5882414 (1999-03-01), Fong et al.
patent: 5950925 (1999-09-01), Fukunaga et al.
patent: 5968276 (1999-10-01), Lei et al.
patent: 5976261 (1999-11-01), Moslehi et al.
patent: 6029602 (2000-02-01), Bhatnagar
patent: 6079356 (2000-06-01), Umotoy et al.
patent: 6079426 (2000-06-01), Subrahmanyam et al.
patent: 6132512 (2000-10-01), Horie et al.
patent: 6152070 (2000-11-01), Fairbairn et al.
patent: 6182603 (2001-02-01), Shang et al.
patent: 6190732 (2001-02-01), Omstead et al.
patent: 6245192 (2001-06-01), Dhindsa et al.
patent: 6274495 (2001-08-01), Omstead et al.
patent: 6291341 (2001-09-01), Sharan et al.
patent: 6302964 (2001-10-01), Umotoy et al.
patent: 6364949 (2002-04-01), Or et al.
patent: 6364954 (2002-04-01), Umotoy et al.
patent: 6387182 (2002-05-01), Horie et al.
patent: 6444039 (2002-09-01), Nguyen
patent: 6454860 (2002-09-01), Metzner et al.
patent: 6478872 (2002-11-01), Chae et al.
patent: 6495233 (2002-12-01), Shmurun et al.
patent: 6499425 (2002-12-01), Sandhu et al.
patent: 6502530 (2003-01-01), Turlot et al.
patent: 6508197 (2003-01-01), Omstead et al.
patent: 6645884 (2003-11-01), Yang et al.
patent: 6692575 (2004-02-01), Omstead et al.
patent: 6827815 (2004-12-01), Hytros et al.
patent: 6902629 (2005-06-01), Zheng et al.
patent: 7550381 (2009-06-01), Lu et al.
patent: 2001/0054381 (2001-12-01), Umotoy et al.
patent: 2002/0017243 (2002-02-01), Pyo
patent: 2002/0092471 (2002-07-01), Kang et al.
patent: 2003/0017268 (2003-01-01), Hu et al.
patent: 2003/0132319 (2003-07-01), Hytros et al.
patent: 2003/0192568 (2003-10-01), Zheng et al.
patent: 2003/0198754 (2003-10-01), Xi et al.
patent: 2004/0052969 (2004-03-01), Lee et al.
patent: 2004/0144490 (2004-07-01), Zhao et al.
patent: 2004/0216844 (2004-11-01), Janakiraman et al.
patent: 2005/0252447 (2005-11-01), Zhao et al.
patent: 2005/0263072 (2005-12-01), Balasubramanian et al.
patent: 2009/0159001 (2009-06-01), Um
patent: 0821084 (1998-01-01), None
patent: 0843339 (1998-05-01), None
patent: 61005515 (1986-01-01), None
patent: 05152208 (1993-06-01), None
patent: 527435 (2003-04-01), None
patent: 539761 (2003-07-01), None
patent: 583335 (2004-04-01), None
patent: WO-9966101 (1999-12-01), None
patent: WO-0104376 (2001-01-01), None
patent: WO-0116396 (2001-03-01), None
patent: WO-03065424 (2003-08-01), None
Boscher, Nicolas, et al., “Atmospheric pressure chemical vapor deposition of WSe2 thin films on glass-highly hydrophobic surfaces”. Journal of Materials Chemistry, 2006, 16, pp. 122-127.
Taiwan IPO Notice of Allowance and Search Report dated Apr. 25, 2008, Taiwan Patent Application No. 94116785.
PCT International Search Report and Written Opinion dated Dec. 24, 2008 for International Application No. PCT/US2008/79272.
Office Action dated Sep. 13, 2007, for U.S. Appl. No. 11/131,010.
Final Office Action dated Feb. 26, 2008, for U.S. Appl. No. 11/131,010.
Office Action dated Jul. 23, 2008, for U.S. Appl. No. 11/130,554.
Office Action dated Oct. 22, 2008, for U.S. Appl. No. 11/130,554.
Tiemessen, M. et al., “Fluorine induced formation of intermetal dielectric effects”,Advanced Semiconductor Manufacturing Conference and Workshop, 1996, ASMC 96 Proceedings, IEEE/SEMI 1996 Cambridge, MA, USA Nov. 12-14, 1996, New York, NY, USA, IEEE, US, Nov. 12, 1996 pp. 303-307, XP010204545, IBSN: 0-7803-3371-3, “Equipment Commonality”, p. 305.
PCT International Search Report for PCT/US03/39942, dated Jul. 12, 2004.
PCT International Search Report for PCT/US2005/017561, dated Aug. 18, 2005.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Methods of uniformity control for low flow process and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of uniformity control for low flow process and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of uniformity control for low flow process and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4202441

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.