Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-04-29
2000-07-18
Elms, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438612, 438618, 437184, 437228, H01L 21336
Patent
active
060906774
ABSTRACT:
In one aspect, the invention includes a method of thermal processing comprising: a) providing a semiconductor substrate, the semiconductor substrate supporting a material that is to be thermally processed; b) forming a sacrificial mass over the material, the mass comprising an inner portion and an outer portion, the inner portion having a different composition than the outer portion and being nearer the material than the outer portion; c) exposing the mass to radiation to heat the mass, the exposing being for a period of time sufficient for the material to absorb heat from the mass and be thermally processed thereby; and d) removing the mass from over the material. In another aspect, the invention includes a method of thermal processing comprising: a) providing a semiconductor substrate, the substrate supporting a material that is to be thermally processed; b) forming a first sacrificial layer over the material; c) forming a second sacrificial layer over the first sacrificial layer, the second sacrificial layer comprising a different composition than the first sacrificial layer; d) exposing the second sacrificial layer to radiation to heat the second layer, the exposing being for a period of time sufficient for the material to absorb heat from the sacrificial layer and be thermally processed thereby; e) cooling the material and the sacrificial layers; and f) removing the sacrificial layers from over the material.
REFERENCES:
patent: 5036023 (1991-07-01), Smith et al.
patent: 5336641 (1994-08-01), Fair et al.
patent: 5439850 (1995-08-01), Oztiirk et al.
patent: 5523262 (1996-06-01), Fair et al.
Burke Robert
Eyolfson Mark
Elms Richard
Luu Pho
Micro)n Technology, Inc.
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