Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-07-25
2006-07-25
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S611000, C438S123000, C438S106000
Reexamination Certificate
active
07081404
ABSTRACT:
Bumping a substrate having a metal layer thereon may include forming a barrier layer on the substrate including the metal layer and forming a conductive bump on the barrier layer. Moreover, the barrier layer may be between the conductive bump and the substrate, and the conductive bump may be laterally offset from the metal layer. After forming the conductive bump, the barrier layer may be removed from the metal layer thereby exposing the metal layer while maintaining a portion of the barrier layer between the conductive bump and the substrate. Related structures are also discussed.
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Chiu Sao-Ling
Jan Jong-Rong
Kung Ling-Chen
Lu Tsai-Hua
Luu Chuong Anh
Myers Bigel & Sibley & Sajovec
Unitive Electronics Inc.
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