Methods of removing resistive remnants from contact holes...

Details Methods of removing resistive remnants from contact holes... Methods of removing resistive remnants from contact holes...

2006-06-27

2006-06-27

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S677000, C438S721000, C438S755000, C438S906000, C438S664000, C438S672000, C438S675000, C257S774000

Reexamination Certificate

active

07067417

ABSTRACT:
A contact hole can be formed in an insulating layer to expose a surface of an underlying silicon layer at a bottom of the contact hole having a first size. A metal silicide layer can be formed beneath the bottom of the contact hole and removed to form a void beneath the contact hole having a second size that is greater than the first size.

REFERENCES:
patent: 5420056 (1995-05-01), Moslehi
patent: 5661083 (1997-08-01), Chen et al.
patent: 5700716 (1997-12-01), Sharan et al.
patent: 5834367 (1998-11-01), Otsuka et al.
patent: 5858878 (1999-01-01), Toda
patent: 5888888 (1999-03-01), Talwar et al.
patent: 6020254 (2000-02-01), Taguwa
patent: 6027990 (2000-02-01), Thakur et al.
patent: 6074956 (2000-06-01), Yang et al.
patent: 6093638 (2000-07-01), Cho et al.
patent: 6159833 (2000-12-01), Lee et al.
patent: 6232239 (2001-05-01), Lim et al.
patent: 6316360 (2001-11-01), Burton et al.
patent: 6400029 (2002-06-01), Blalock et al.
patent: 6458710 (2002-10-01), Burke
patent: 6500766 (2002-12-01), Lu et al.
patent: 6576547 (2003-06-01), Li
patent: 6602785 (2003-08-01), Sharan et al.
patent: 6758223 (2004-07-01), Cowley et al.
patent: 6797619 (2004-09-01), Jang et al.
patent: 6840249 (2005-01-01), Seo
patent: 2002/0045355 (2002-04-01), Chong et al.
patent: 2002/0197853 (2002-12-01), Nagai et al.
patent: 2003/0027429 (2003-02-01), Bellandi et al.
patent: 2003/0186525 (2003-10-01), Cheong
patent: 2004/0009660 (2004-01-01), Liu et al.
patent: 2004/0063314 (2004-04-01), Sharan et al.
patent: 2001-196327 (2001-07-01), None
patent: 10-2001-0016657 (2001-03-01), None
Wolf, “Silicon Processing for the VLSI Era,” vol. 2, 1990, pp. 190-191.

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